Технически документи
Спецификации
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
80 V
Package Type
UPAK
Mounting Type
Surface Mount
Maximum Power Dissipation
2.5 W
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
150 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.6 x 4.6 x 2.6mm
Maximum Operating Temperature
+150 °C
Детайли за продукта
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 55,99
€ 0,56 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
€ 55,99
€ 0,56 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
100
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Ролка |
---|---|---|
100 - 240 | € 0,56 | € 5,60 |
250 - 490 | € 0,525 | € 5,25 |
500 - 990 | € 0,486 | € 4,86 |
1000+ | € 0,443 | € 4,43 |
Технически документи
Спецификации
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
80 V
Package Type
UPAK
Mounting Type
Surface Mount
Maximum Power Dissipation
2.5 W
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
150 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.6 x 4.6 x 2.6mm
Maximum Operating Temperature
+150 °C
Детайли за продукта
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.