Технически документи
Спецификации
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
94 A
Maximum Drain Source Voltage
30 V
Package Type
PowerDFN56
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
28.8 nC @ 10 V
Width
5.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.1mm
Страна на произход
China
Детайли за продукта
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
Стандарт
25
P.O.A.
Стандарт
25
Технически документи
Спецификации
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
94 A
Maximum Drain Source Voltage
30 V
Package Type
PowerDFN56
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
28.8 nC @ 10 V
Width
5.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.1mm
Страна на произход
China
Детайли за продукта
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.