Технически документи
Спецификации
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
250 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
390 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
10.41mm
Typical Gate Charge @ Vgs
83 @ 10 V nC
Width
11.05mm
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Height
4.83mm
Series
HiperFET
Minimum Operating Temperature
-55 °C
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 9,16
Всеки (ex VAT)
1
€ 9,16
Всеки (ex VAT)
1
Купете в насипно състояние
количество | Единична цена |
---|---|
1 - 4 | € 9,16 |
5 - 9 | € 7,86 |
10 - 24 | € 7,47 |
25+ | € 7,16 |
Технически документи
Спецификации
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
250 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
390 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
10.41mm
Typical Gate Charge @ Vgs
83 @ 10 V nC
Width
11.05mm
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Height
4.83mm
Series
HiperFET
Minimum Operating Temperature
-55 °C