N-Channel MOSFET, 80 A, 250 V, 3-Pin D2PAK IXYS IXFA80N25X3

Номер на артикул на RS: 146-4403Марка: IXYS№ по каталога на производителя: IXFA80N25X3
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Технически документи

Спецификации

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

250 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

390 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

10.41mm

Typical Gate Charge @ Vgs

83 @ 10 V nC

Width

11.05mm

Number of Elements per Chip

1

Forward Diode Voltage

1.4V

Height

4.83mm

Series

HiperFET

Minimum Operating Temperature

-55 °C

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

€ 9,16

Всеки (ex VAT)

N-Channel MOSFET, 80 A, 250 V, 3-Pin D2PAK IXYS IXFA80N25X3

€ 9,16

Всеки (ex VAT)

N-Channel MOSFET, 80 A, 250 V, 3-Pin D2PAK IXYS IXFA80N25X3
Информацията за складовите наличности временно не е налична.

Купете в насипно състояние

количествоЕдинична цена
1 - 4€ 9,16
5 - 9€ 7,86
10 - 24€ 7,47
25+€ 7,16

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

250 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

390 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

10.41mm

Typical Gate Charge @ Vgs

83 @ 10 V nC

Width

11.05mm

Number of Elements per Chip

1

Forward Diode Voltage

1.4V

Height

4.83mm

Series

HiperFET

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more