Infineon HEXFET N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB IRLB3813PBF

Номер на артикул на RS: 725-9313PМарка: Infineon№ по каталога на производителя: IRLB3813PBF
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Технически документи

Спецификации

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

260 A

Maximum Drain Source Voltage

30 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

57 nC @ 4.5 V

Width

4.83mm

Height

9.02mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Информацията за складовите наличности временно не е налична.

€ 18,12

€ 0,906 Each (Supplied in a Tube) (ex VAT)

Infineon HEXFET N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB IRLB3813PBF
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Производствен пакет (Тръба)

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Стандарт - each

Предлагат се на бройка по 2.

Производство -

Предлагат се на бройка по 2.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

20

Предлагат се на бройка по 2
20€ 18,12
22€ 19,93
24€ 21,74
26€ 23,55
28€ 25,36
30€ 27,17
32€ 28,99
34€ 30,80
36€ 32,61
38€ 34,42
40€ 36,23
42€ 38,04
44€ 39,86
46€ 41,67
48€ 43,48

€ 18,12

€ 0,906 Each (Supplied in a Tube) (ex VAT)

Infineon HEXFET N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB IRLB3813PBF
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Производствен пакет (Тръба)

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 2.

Производство -

Предлагат се на бройка по 2.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

20

Предлагат се на бройка по 2
20€ 18,12
22€ 19,93
24€ 21,74
26€ 23,55
28€ 25,36
30€ 27,17
32€ 28,99
34€ 30,80
36€ 32,61
38€ 34,42
40€ 36,23
42€ 38,04
44€ 39,86
46€ 41,67
48€ 43,48

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Тръба
20 - 48€ 0,906€ 1,81
50 - 98€ 0,847€ 1,70
100 - 198€ 0,795€ 1,59
200+€ 0,73€ 1,46

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

260 A

Maximum Drain Source Voltage

30 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

57 nC @ 4.5 V

Width

4.83mm

Height

9.02mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more