N-Channel MOSFET, 130 A, 75 V, 3-Pin TO-220AB Infineon IRF1407PBF

Номер на артикул на RS: 171-1902Марка: Infineon№ по каталога на производителя: IRF1407PBF
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Технически документи

Спецификации

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

75 V

Series

IRF1407PbF

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

4.83mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

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Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Информацията за складовите наличности временно не е налична.

P.O.A.

N-Channel MOSFET, 130 A, 75 V, 3-Pin TO-220AB Infineon IRF1407PBF

5

Предлагат се на бройка по 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

N-Channel MOSFET, 130 A, 75 V, 3-Pin TO-220AB Infineon IRF1407PBF
Информацията за складовите наличности временно не е налична.

5

Предлагат се на бройка по 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

130 A

Maximum Drain Source Voltage

75 V

Series

IRF1407PbF

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

4.83mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more