Infineon CoolMOS™ C6 N-Channel MOSFET, 77.5 A, 650 V, 3-Pin TO-247 IPW60R041C6FKSA1
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
77.5 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C6
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
481 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.21mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
290 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
21.1mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 237,95
€ 7,932 Each (In a Tube of 30) (ex VAT)
30
€ 237,95
€ 7,932 Each (In a Tube of 30) (ex VAT)
30
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
77.5 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C6
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
481 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.21mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
290 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
21.1mm
Minimum Operating Temperature
-55 °C
Страна на произход
China
Детайли за продукта
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products