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Infineon Dual SiC N-Channel MOSFET, 302 A, 40 V, 7-Pin PG-TO263-7 IPF009N04NF2SATMA1

Номер на артикул на RS: 262-5868Марка: Infineon№ по каталога на производителя: IPF009N04NF2SATMA1
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

302 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Информацията за складовите наличности временно не е налична.

€ 1 379,80

€ 1,725 Each (On a Reel of 800) (ex VAT)

Infineon Dual SiC N-Channel MOSFET, 302 A, 40 V, 7-Pin PG-TO263-7 IPF009N04NF2SATMA1

€ 1 379,80

€ 1,725 Each (On a Reel of 800) (ex VAT)

Infineon Dual SiC N-Channel MOSFET, 302 A, 40 V, 7-Pin PG-TO263-7 IPF009N04NF2SATMA1
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

302 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more