Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
150 V
Package Type
DPAK (TO-252)
Series
IPD200N15N3 G
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Length
10.36mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
4.57mm
Minimum Operating Temperature
-55 °C
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 2,281
Each (In a Pack of 10) (ex VAT)
10
€ 2,281
Each (In a Pack of 10) (ex VAT)
10
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
10 - 10 | € 2,281 | € 22,80 |
20 - 40 | € 1,824 | € 18,24 |
50 - 90 | € 1,711 | € 17,11 |
100 - 240 | € 1,596 | € 15,96 |
250+ | € 1,483 | € 14,83 |
Технически документи
Спецификации
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
150 V
Package Type
DPAK (TO-252)
Series
IPD200N15N3 G
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Length
10.36mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
4.57mm
Minimum Operating Temperature
-55 °C