Fuji 6MBi50VA-120-50, M636 , N-Channel 3 Phase Bridge IGBT Module, 50 A max, 1200 V, Screw Mount
Технически документи
Спецификации
Brand
FujiMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
280 W
Package Type
M636
Configuration
3 Phase Bridge
Mounting Type
Screw Mount
Channel Type
N
Pin Count
28
Dimensions
107.5 x 45 x 17mm
Maximum Operating Temperature
+150 °C
Детайли за продукта
IGBT Modules 6-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
1
P.O.A.
1
Ideate. Create. Collaborate
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- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
Brand
FujiMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
280 W
Package Type
M636
Configuration
3 Phase Bridge
Mounting Type
Screw Mount
Channel Type
N
Pin Count
28
Dimensions
107.5 x 45 x 17mm
Maximum Operating Temperature
+150 °C
Детайли за продукта
IGBT Modules 6-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products