Diodes Inc Dual N/P-Channel MOSFET, 2.6 A, 4.7 A, 60 V, 8-Pin SOIC ZXMC4559DN8TA

Номер на артикул на RS: 823-4059Марка: DiodesZetex№ по каталога на производителя: ZXMC4559DN8TA
brand-logo
Преглед на всички в MOSFETs

Технически документи

Спецификации

Channel Type

N, P

Maximum Continuous Drain Current

2.6 A, 4.7 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

75 mΩ, 125 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.95mm

Transistor Material

Si

Number of Elements per Chip

2

Length

4.95mm

Typical Gate Charge @ Vgs

20.4 nC @ 10 V, 24.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Информацията за складовите наличности временно не е налична.

€ 12,74

€ 0,637 Each (In a Pack of 20) (ex VAT)

Diodes Inc Dual N/P-Channel MOSFET, 2.6 A, 4.7 A, 60 V, 8-Pin SOIC ZXMC4559DN8TA
Изберете тип опаковка

€ 12,74

€ 0,637 Each (In a Pack of 20) (ex VAT)

Diodes Inc Dual N/P-Channel MOSFET, 2.6 A, 4.7 A, 60 V, 8-Pin SOIC ZXMC4559DN8TA
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
20 - 240€ 0,637€ 12,74
260+€ 0,511€ 10,22

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N, P

Maximum Continuous Drain Current

2.6 A, 4.7 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

75 mΩ, 125 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.95mm

Transistor Material

Si

Number of Elements per Chip

2

Length

4.95mm

Typical Gate Charge @ Vgs

20.4 nC @ 10 V, 24.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more