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Diodes Inc N-Channel MOSFET, 500 mA, 60 V, 3-Pin SOT-23 MMBF170-7-F

Номер на артикул на RS: 708-2393Марка: DiodesZetex№ по каталога на производителя: MMBF170-7-FDistrelec Article No.: 30041455
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Информацията за складовите наличности временно не е налична.

€ 1,11

€ 0,022 Each (In a Pack of 50) (ex VAT)

Diodes Inc N-Channel MOSFET, 500 mA, 60 V, 3-Pin SOT-23 MMBF170-7-F
Изберете тип опаковка

€ 1,11

€ 0,022 Each (In a Pack of 50) (ex VAT)

Diodes Inc N-Channel MOSFET, 500 mA, 60 V, 3-Pin SOT-23 MMBF170-7-F
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
50 - 550€ 0,022€ 1,12
600 - 1450€ 0,021€ 1,06
1500+€ 0,021€ 1,06

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more