Diodes Inc N-Channel MOSFET, 900 mA, 20 V, 3-Pin X1-DFN1212 DMN2450UFD-7

Номер на артикул на RS: 182-6892Марка: DiodesZetex№ по каталога на производителя: DMN2450UFD-7
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

20 V

Package Type

X1-DFN1212

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

890 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.25mm

Length

1.25mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.48mm

Страна на произход

China

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Информацията за складовите наличности временно не е налична.

€ 140,26

€ 0,047 Each (On a Reel of 3000) (ex VAT)

Diodes Inc N-Channel MOSFET, 900 mA, 20 V, 3-Pin X1-DFN1212 DMN2450UFD-7

€ 140,26

€ 0,047 Each (On a Reel of 3000) (ex VAT)

Diodes Inc N-Channel MOSFET, 900 mA, 20 V, 3-Pin X1-DFN1212 DMN2450UFD-7
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

20 V

Package Type

X1-DFN1212

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

890 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.25mm

Length

1.25mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.48mm

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more