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Diodes Inc P-Channel MOSFET, 460 mA, 20 V, 3-Pin SOT-523 DMG1013T-7

Номер на артикул на RS: 751-4076PМарка: DiodesZetex№ по каталога на производителя: DMG1013T-7
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

460 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

270 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Typical Gate Charge @ Vgs

0.58 nC @ 4.5 V

Width

0.85mm

Transistor Material

Si

Number of Elements per Chip

1

Length

1.7mm

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Информацията за складовите наличности временно не е налична.

€ 21,82

€ 0,036 Each (Supplied on a Reel) (ex VAT)

Diodes Inc P-Channel MOSFET, 460 mA, 20 V, 3-Pin SOT-523 DMG1013T-7
Изберете тип опаковка

€ 21,82

€ 0,036 Each (Supplied on a Reel) (ex VAT)

Diodes Inc P-Channel MOSFET, 460 mA, 20 V, 3-Pin SOT-523 DMG1013T-7
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Ролка
600 - 1400€ 0,036€ 3,64
1500+€ 0,031€ 3,05

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

460 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

270 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Typical Gate Charge @ Vgs

0.58 nC @ 4.5 V

Width

0.85mm

Transistor Material

Si

Number of Elements per Chip

1

Length

1.7mm

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Страна на произход

China

Детайли за продукта

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more