Vishay N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO-8 SI7850DP-T1-E3

Номер на артикул на RS: 710-4764Марка: Vishay№ по каталога на производителя: SI7850DP-T1-E3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.89mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.9mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

18 nC @ 10 V

Height

1.04mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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MOSFET, N-CHANNEL, 60V, 10.3A, 4.55W, SO-8
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€ 9,30

€ 1,86 Each (In a Pack of 5) (ex VAT)

Vishay N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO-8 SI7850DP-T1-E3
Изберете тип опаковка

€ 9,30

€ 1,86 Each (In a Pack of 5) (ex VAT)

Vishay N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO-8 SI7850DP-T1-E3

Информацията за складовите наличности временно не е налична.

Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

количествоЕдинична ценаPer Опаковка
5 - 45€ 1,86€ 9,30
50 - 120€ 1,581€ 7,90
125 - 245€ 1,377€ 6,88
250 - 495€ 1,134€ 5,67
500+€ 0,896€ 4,48

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
MOSFET, N-CHANNEL, 60V, 10.3A, 4.55W, SO-8
P.O.A.Всеки (ex VAT)

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.89mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.9mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

18 nC @ 10 V

Height

1.04mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от
MOSFET, N-CHANNEL, 60V, 10.3A, 4.55W, SO-8
P.O.A.Всеки (ex VAT)