Технически документи
Спецификации
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
65 mΩ, 140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V, 7.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.5mm
Minimum Operating Temperature
-55 °C
Детайли за продукта
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 11,72
€ 0,586 Each (In a Pack of 20) (ex VAT)
Стандарт
20
€ 11,72
€ 0,586 Each (In a Pack of 20) (ex VAT)
Информацията за складовите наличности временно не е налична.
Стандарт
20
Информацията за складовите наличности временно не е налична.
количество | Единична цена | Per Опаковка |
---|---|---|
20 - 180 | € 0,586 | € 11,72 |
200 - 480 | € 0,498 | € 9,96 |
500 - 980 | € 0,468 | € 9,36 |
1000 - 1980 | € 0,44 | € 8,81 |
2000+ | € 0,41 | € 8,21 |
Технически документи
Спецификации
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
65 mΩ, 140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V, 7.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.5mm
Minimum Operating Temperature
-55 °C
Детайли за продукта