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Vishay N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 SI2302DDS-T1-GE3

Номер на артикул на RS: 152-6358Марка: Vishay№ по каталога на производителя: SI2302DDS-T1-GE3
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Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.85V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

0.71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

3.5 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.02mm

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Информацията за складовите наличности временно не е налична.

€ 7,55

€ 0,302 Each (In a Pack of 25) (ex VAT)

Vishay N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 SI2302DDS-T1-GE3
Изберете тип опаковка

€ 7,55

€ 0,302 Each (In a Pack of 25) (ex VAT)

Vishay N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 SI2302DDS-T1-GE3
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
25 - 225€ 0,302€ 7,55
250 - 600€ 0,283€ 7,07
625 - 1225€ 0,257€ 6,42
1250 - 2475€ 0,242€ 6,06
2500+€ 0,226€ 5,64

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.85V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

0.71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

3.5 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.02mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more