Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
225 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Width
4.45mm
Height
15.1mm
Страна на произход
China
Детайли за продукта
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
€ 15,16
€ 3,032 Each (In a Pack of 5) (ex VAT)
Стандарт
5
€ 15,16
€ 3,032 Each (In a Pack of 5) (ex VAT)
Стандарт
5
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Опаковка |
---|---|---|
5 - 20 | € 3,032 | € 15,16 |
25 - 45 | € 2,672 | € 13,36 |
50 - 120 | € 2,333 | € 11,66 |
125 - 245 | € 2,181 | € 10,90 |
250+ | € 2,059 | € 10,30 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
225 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Width
4.45mm
Height
15.1mm
Страна на произход
China
Детайли за продукта