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Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L

Номер на артикул на RS: 171-2481PМарка: Toshiba№ по каталога на производителя: TK60S06K3L
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

7mm

Length

6.5mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

2.3mm

Automotive Standard

AEC-Q101

Страна на произход

Japan

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Информацията за складовите наличности временно не е налична.

€ 61,72

€ 1,234 Each (Supplied on a Reel) (ex VAT)

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L
Изберете тип опаковка

€ 61,72

€ 1,234 Each (Supplied on a Reel) (ex VAT)

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Ролка
50 - 95€ 1,234€ 6,17
100 - 995€ 1,101€ 5,50
1000+€ 0,988€ 4,94

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

7mm

Length

6.5mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

2.3mm

Automotive Standard

AEC-Q101

Страна на произход

Japan

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more