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Toshiba TK N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S

Номер на артикул на RS: 827-6220Марка: Toshiba№ по каталога на производителя: TK40E10N1,S1X(S
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

100 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

126 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

49 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.1mm

Страна на произход

China

Детайли за продукта

MOSFET Transistors, Toshiba

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Информацията за складовите наличности временно не е налична.

€ 7,27

€ 1,455 Each (In a Pack of 5) (ex VAT)

Toshiba TK N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S
Изберете тип опаковка

€ 7,27

€ 1,455 Each (In a Pack of 5) (ex VAT)

Toshiba TK N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

100 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

126 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.16mm

Typical Gate Charge @ Vgs

49 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.1mm

Страна на произход

China

Детайли за продукта

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more