Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.5mm
Typical Gate Charge @ Vgs
105 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20mm
Страна на произход
Japan
Детайли за продукта
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
€ 2,79
€ 2,79 Всеки (ex VAT)
1
€ 2,79
€ 2,79 Всеки (ex VAT)
1
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена |
---|---|
1 - 9 | € 2,79 |
10 - 19 | € 1,82 |
20 - 39 | € 1,78 |
40 - 79 | € 1,73 |
80+ | € 1,67 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.5mm
Typical Gate Charge @ Vgs
105 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20mm
Страна на произход
Japan
Детайли за продукта