Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-3PN TK31J60W5,S1VQ(O

Номер на артикул на RS: 896-2331Марка: Toshiba№ по каталога на производителя: TK31J60W5,S1VQ(O
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.5mm

Typical Gate Charge @ Vgs

105 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20mm

Страна на произход

Japan

Детайли за продукта

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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Информацията за складовите наличности временно не е налична.

€ 2,79

€ 2,79 Всеки (ex VAT)

Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-3PN TK31J60W5,S1VQ(O

€ 2,79

€ 2,79 Всеки (ex VAT)

Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-3PN TK31J60W5,S1VQ(O
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична цена
1 - 9€ 2,79
10 - 19€ 1,82
20 - 39€ 1,78
40 - 79€ 1,73
80+€ 1,67

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Технически документи

Спецификации

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.5mm

Typical Gate Charge @ Vgs

105 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

20mm

Страна на произход

Japan

Детайли за продукта

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more