Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
207 A
Maximum Drain Source Voltage
100 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Детайли за продукта
MOSFET Transistors, Toshiba
€ 3,07
€ 3,07 Всеки (ex VAT)
Стандарт
1
€ 3,07
€ 3,07 Всеки (ex VAT)
Стандарт
1
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена |
---|---|
1 - 24 | € 3,07 |
25 - 99 | € 2,90 |
100 - 349 | € 2,77 |
350 - 499 | € 2,47 |
500+ | € 2,30 |
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
207 A
Maximum Drain Source Voltage
100 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Детайли за продукта