Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Series
2SK
Package Type
PW Mold2
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
2.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Height
5.5mm
Minimum Operating Temperature
-55 °C
Страна на произход
Japan
Детайли за продукта
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
P.O.A.
Each (In a Pack of 20) (ex VAT)
20
P.O.A.
Each (In a Pack of 20) (ex VAT)
20
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
Технически документи
Спецификации
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Series
2SK
Package Type
PW Mold2
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
2.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Height
5.5mm
Minimum Operating Temperature
-55 °C
Страна на произход
Japan
Детайли за продукта