STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 5.8 A, 900 V, 3-Pin D2PAK STB6NK90ZT4

Номер на артикул на RS: 920-6639Марка: STMicroelectronics№ по каталога на производителя: STB6NK90ZT4
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

900 V

Series

MDmesh, SuperMESH

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

46.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

4.6mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Информацията за складовите наличности временно не е налична.

€ 1 425,94

€ 1,426 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 5.8 A, 900 V, 3-Pin D2PAK STB6NK90ZT4

€ 1 425,94

€ 1,426 Each (On a Reel of 1000) (ex VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 5.8 A, 900 V, 3-Pin D2PAK STB6NK90ZT4
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

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  • Download 3D Models, Schematics and Footprints from more than a million products
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

5.8 A

Maximum Drain Source Voltage

900 V

Series

MDmesh, SuperMESH

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

46.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

4.6mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more