Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
60 V
Series
NVD5C668NL
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
44 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
2.38mm
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Детайли за продукта
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 94,21
€ 1,884 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
€ 94,21
€ 1,884 Each (Supplied on a Reel) (ex VAT)
Производствен пакет (Ролка)
50
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена | Per Ролка |
---|---|---|
50 - 95 | € 1,884 | € 9,42 |
100 - 495 | € 1,634 | € 8,17 |
500 - 995 | € 1,435 | € 7,18 |
1000+ | € 1,307 | € 6,53 |
Технически документи
Спецификации
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
60 V
Series
NVD5C668NL
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
44 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
2.38mm
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Детайли за продукта