onsemi Dual N-Channel MOSFET, 280 mA, 20 V, 6-Pin SOT-963 NTUD3170NZT5G

Номер на артикул на RS: 780-4792PМарка: onsemi№ по каталога на производителя: NTUD3170NZT5G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-963

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

4.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

2

Length

1.05mm

Maximum Operating Temperature

+150 °C

Width

0.85mm

Height

0.4mm

Minimum Operating Temperature

-55 °C

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Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Информацията за складовите наличности временно не е налична.

€ 10,90

€ 0,436 Each (Supplied on a Reel) (ex VAT)

onsemi Dual N-Channel MOSFET, 280 mA, 20 V, 6-Pin SOT-963 NTUD3170NZT5G
Изберете тип опаковка

€ 10,90

€ 0,436 Each (Supplied on a Reel) (ex VAT)

onsemi Dual N-Channel MOSFET, 280 mA, 20 V, 6-Pin SOT-963 NTUD3170NZT5G
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

280 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-963

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

4.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

2

Length

1.05mm

Maximum Operating Temperature

+150 °C

Width

0.85mm

Height

0.4mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more