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onsemi P-Channel MOSFET, 2.6 A, 60 V, 3-Pin SOT-223 NTF2955T1G

Номер на артикул на RS: 688-9130PМарка: onsemi№ по каталога на производителя: NTF2955T1G
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Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

185 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

14.3 nC @ 10 V

Width

3.5mm

Height

1.57mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Информацията за складовите наличности временно не е налична.

€ 21,51

€ 1,076 Each (Supplied on a Reel) (ex VAT)

onsemi P-Channel MOSFET, 2.6 A, 60 V, 3-Pin SOT-223 NTF2955T1G
Изберете тип опаковка

€ 21,51

€ 1,076 Each (Supplied on a Reel) (ex VAT)

onsemi P-Channel MOSFET, 2.6 A, 60 V, 3-Pin SOT-223 NTF2955T1G
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Ролка
20 - 198€ 1,076€ 2,15
200+€ 0,933€ 1,87

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

185 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

14.3 nC @ 10 V

Width

3.5mm

Height

1.57mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more