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onsemi N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220 FCP190N65S3

Номер на артикул на RS: 172-3425Марка: onsemi№ по каталога на производителя: FCP190N65S3
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Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

144 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

4.7mm

Length

10.67mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

16.3mm

Страна на произход

China

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Информацията за складовите наличности временно не е налична.

€ 1 273,73

€ 1,592 Each (In a Tube of 800) (ex VAT)

onsemi N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220 FCP190N65S3

€ 1 273,73

€ 1,592 Each (In a Tube of 800) (ex VAT)

onsemi N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220 FCP190N65S3
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Тръба
800 - 800€ 1,592€ 1 273,73
1600 - 2400€ 1,55€ 1 239,94
3200 - 4800€ 1,51€ 1 208,03
5600+€ 1,472€ 1 177,99

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

144 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

4.7mm

Length

10.67mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

16.3mm

Страна на произход

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more