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Nexperia P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-323 PMF170XP,115

Номер на артикул на RS: 103-8120Марка: Nexperia№ по каталога на производителя: PMF170XP
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Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

1.67 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Typical Gate Charge @ Vgs

2.6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Страна на произход

Malaysia

Детайли за продукта

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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Информацията за складовите наличности временно не е налична.

€ 121,23

€ 0,04 Each (On a Reel of 3000) (ex VAT)

Nexperia P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-323 PMF170XP,115

€ 121,23

€ 0,04 Each (On a Reel of 3000) (ex VAT)

Nexperia P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-323 PMF170XP,115
Информацията за складовите наличности временно не е налична.

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Ролка
3000 - 6000€ 0,04€ 121,23
9000+€ 0,04€ 121,23

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

P

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

1.67 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Typical Gate Charge @ Vgs

2.6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Страна на произход

Malaysia

Детайли за продукта

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more