Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB IRFB7530PBF

Номер на артикул на RS: 820-8833Марка: Infineon№ по каталога на производителя: IRFB7530PBF
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Технически документи

Спецификации

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

195 A

Maximum Drain Source Voltage

60 V

Series

StrongIRFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

274 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.83mm

Transistor Material

Si

Forward Diode Voltage

1.2V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Информацията за складовите наличности временно не е налична.

€ 4,25

€ 2,127 Each (In a Pack of 2) (ex VAT)

Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB IRFB7530PBF
Изберете тип опаковка

Стандарт

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 2.

Производство -

Предлагат се на бройка по 2.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

2

Предлагат се на бройка по 2
2€ 4,25
4€ 8,51
6€ 12,76
8€ 17,02
10€ 21,27
12€ 25,53
14€ 29,78
16€ 34,04
18€ 38,29
20€ 37,87
22€ 41,66
24€ 45,44
26€ 49,23
28€ 53,02
30€ 56,80

€ 4,25

€ 2,127 Each (In a Pack of 2) (ex VAT)

Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB IRFB7530PBF
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Стандарт

Изберете тип опаковка

Стандарт - each

Предлагат се на бройка по 2.

Производство -

Предлагат се на бройка по 2.

Препоръчва се за поръчки в големи количества. Артикулите са опаковани готови за поставяне в машини, което Ви позволява да подобрите ефективността на производството.

2

Предлагат се на бройка по 2
2€ 4,25
4€ 8,51
6€ 12,76
8€ 17,02
10€ 21,27
12€ 25,53
14€ 29,78
16€ 34,04
18€ 38,29
20€ 37,87
22€ 41,66
24€ 45,44
26€ 49,23
28€ 53,02
30€ 56,80

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Опаковка
2 - 18€ 2,127€ 4,25
20 - 48€ 1,893€ 3,79
50 - 98€ 1,788€ 3,58
100 - 198€ 1,66€ 3,32
200+€ 1,531€ 3,06

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от

Технически документи

Спецификации

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

195 A

Maximum Drain Source Voltage

60 V

Series

StrongIRFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

274 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.83mm

Transistor Material

Si

Forward Diode Voltage

1.2V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Може да се интересувате от