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Diodes Inc N-Channel MOSFET, 260 mA, 240 V, 3-Pin E-Line ZVN4424A

Номер на артикул на RS: 157-4619PМарка: DiodesZetex№ по каталога на производителя: ZVN4424A
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

240 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

750 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-40 V, +40 V

Maximum Operating Temperature

+150 °C

Width

2.41mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.77mm

Height

4.01mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Информацията за складовите наличности временно не е налична.

€ 58,55

€ 1,171 Each (Supplied as a Tape) (ex VAT)

Diodes Inc N-Channel MOSFET, 260 mA, 240 V, 3-Pin E-Line ZVN4424A
Изберете тип опаковка

€ 58,55

€ 1,171 Each (Supplied as a Tape) (ex VAT)

Diodes Inc N-Channel MOSFET, 260 mA, 240 V, 3-Pin E-Line ZVN4424A
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Информацията за складовите наличности временно не е налична.

Моля, проверете отново по-късно.

количествоЕдинична ценаPer Лента
50 - 95€ 1,171€ 5,86
100 - 245€ 0,922€ 4,61
250 - 495€ 0,866€ 4,33
500+€ 0,845€ 4,22

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

240 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

750 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-40 V, +40 V

Maximum Operating Temperature

+150 °C

Width

2.41mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.77mm

Height

4.01mm

Minimum Operating Temperature

-55 °C

Детайли за продукта

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more