Технически документи
Спецификации
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
36 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
30.4 nC @ 15 V
Width
21.1mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Height
5.21mm
Страна на произход
China
Детайли за продукта
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation
MOSFET Transistors, Wolfspeed
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 18,14
Всеки (ex VAT)
Стандарт
1
€ 18,14
Всеки (ex VAT)
Стандарт
1
Купете в насипно състояние
количество | Единична цена |
---|---|
1 - 4 | € 18,14 |
5 - 9 | € 17,17 |
10 - 29 | € 16,74 |
30 - 89 | € 16,27 |
90+ | € 15,86 |
Технически документи
Спецификации
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
36 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
30.4 nC @ 15 V
Width
21.1mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Height
5.21mm
Страна на произход
China
Детайли за продукта
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
Enhancement-mode N-channel SiC technology
High Drain-Source breakdown voltages - up to 1200V
Multiple devices are easy to parallel and simple to drive
High speed switching with low on-resistance
Latch-up resistant operation