Winslow Straight Through Hole Mount 1.27 mm, 2.54 mm Pitch IC Socket Adapter, 8 Pin Female QFN to 8 Pin Male DIP
Технически документи
Спецификации
End 1 Gender
Female
End 2 Type
DIP
End 2 Gender
Male
End 2 Number of Contacts
8
End 1 Type
QFN
End 1 Number of Contacts
8
Body Orientation
Straight
End 2
8 Pin Male DIP
Pitch
1.27 mm, 2.54 mm
End 1
8 Pin Female QFN
Mounting Type
Through Hole
Brand
WinslowСтрана на произход
United Kingdom
Детайли за продукта
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Features
• Logic-level gate drive
• ESD Protection
• Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications
RS Product Codes
864-8802 FGB3040CS 400V 20A D2PAK
864-8805 FGB3040G2_F085 400V 25A DPAK-2
807-0767 FGD3040G2_F085 400V 25A DPAK
864-8880 FGI3040G2_F085 400V 25A I2PAK
864-8899 FGP3040G2_F085 400V 25A TO220
864-8809 FGB3245G2_F085 450V 23A D2PAK-2
864-8827 FGD3245G2_F085 450V 23A DPAK
807-0776 FGD3440G2_F085 400V 25A DPAK
864-8818 FGB3440G2_F085 400V 25A D2PAK-2
864-8893 FGP3440G2_F085 400V 25A TO220
807-8751 ISL9V5036P3_F085 360V 31A TO220
862-9369 ISL9V5045S3ST_F085 450V 43A D2PAK
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 7,37
Each (In a Pack of 5) (ex VAT)
5
€ 7,37
Each (In a Pack of 5) (ex VAT)
5
Купете в насипно състояние
| количество | Единична цена | Per Опаковка |
|---|---|---|
| 5 - 120 | € 7,37 | € 36,85 |
| 125 - 370 | € 6,63 | € 33,15 |
| 375 - 995 | € 5,886 | € 29,43 |
| 1000 - 1995 | € 5,159 | € 25,79 |
| 2000+ | € 4,79 | € 23,95 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Технически документи
Спецификации
End 1 Gender
Female
End 2 Type
DIP
End 2 Gender
Male
End 2 Number of Contacts
8
End 1 Type
QFN
End 1 Number of Contacts
8
Body Orientation
Straight
End 2
8 Pin Male DIP
Pitch
1.27 mm, 2.54 mm
End 1
8 Pin Female QFN
Mounting Type
Through Hole
Brand
WinslowСтрана на произход
United Kingdom
Детайли за продукта
Automotive Ignition IGBT, Fairchild Semiconductor
These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.
Features
• Logic-level gate drive
• ESD Protection
• Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications
RS Product Codes
864-8802 FGB3040CS 400V 20A D2PAK
864-8805 FGB3040G2_F085 400V 25A DPAK-2
807-0767 FGD3040G2_F085 400V 25A DPAK
864-8880 FGI3040G2_F085 400V 25A I2PAK
864-8899 FGP3040G2_F085 400V 25A TO220
864-8809 FGB3245G2_F085 450V 23A D2PAK-2
864-8827 FGD3245G2_F085 450V 23A DPAK
807-0776 FGD3440G2_F085 400V 25A DPAK
864-8818 FGB3440G2_F085 400V 25A D2PAK-2
864-8893 FGP3440G2_F085 400V 25A TO220
807-8751 ISL9V5036P3_F085 360V 31A TO220
862-9369 ISL9V5045S3ST_F085 450V 43A D2PAK
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products