Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
76 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Width
4.65mm
Transistor Material
Si
Length
10.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
15.49mm
Страна на произход
Taiwan, Province Of China
Детайли за продукта
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 3,038
Each (In a Pack of 5) (ex VAT)
5
€ 3,038
Each (In a Pack of 5) (ex VAT)
5
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
5 - 45 | € 3,038 | € 15,19 |
50 - 120 | € 2,25 | € 11,25 |
125 - 245 | € 2,037 | € 10,19 |
250 - 495 | € 1,822 | € 9,11 |
500+ | € 1,67 | € 8,35 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
76 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Width
4.65mm
Transistor Material
Si
Length
10.51mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
15.49mm
Страна на произход
Taiwan, Province Of China
Детайли за продукта