Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12.7 A
Maximum Drain Source Voltage
25 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Typical Gate Charge @ Vgs
17.5 nC @ 4.5 V, 37 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
1.55mm
Страна на произход
China
Детайли за продукта
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 1,158
Each (In a Pack of 5) (ex VAT)
5
€ 1,158
Each (In a Pack of 5) (ex VAT)
5
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
5 - 45 | € 1,158 | € 5,79 |
50 - 245 | € 1,088 | € 5,44 |
250 - 495 | € 0,985 | € 4,92 |
500 - 1245 | € 0,926 | € 4,63 |
1250+ | € 0,87 | € 4,35 |
Технически документи
Спецификации
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12.7 A
Maximum Drain Source Voltage
25 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Typical Gate Charge @ Vgs
17.5 nC @ 4.5 V, 37 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
1.55mm
Страна на произход
China
Детайли за продукта