Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
18 nC @ 10 V
Maximum Operating Temperature
+175 °C
Length
5mm
Width
6.29mm
Transistor Material
Si
Height
3.37mm
Minimum Operating Temperature
-55 °C
Страна на произход
Philippines
Детайли за продукта
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 1,63
Всеки (ex VAT)
1
€ 1,63
Всеки (ex VAT)
1
Купете в насипно състояние
количество | Единична цена |
---|---|
1 - 9 | € 1,63 |
10 - 49 | € 1,54 |
50 - 99 | € 1,49 |
100 - 249 | € 1,40 |
250+ | € 1,36 |
Технически документи
Спецификации
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
18 nC @ 10 V
Maximum Operating Temperature
+175 °C
Length
5mm
Width
6.29mm
Transistor Material
Si
Height
3.37mm
Minimum Operating Temperature
-55 °C
Страна на произход
Philippines
Детайли за продукта