P-Channel MOSFET, 16 A, 80 V, 4-Pin PowerPAK SO-8L Vishay Siliconix SQJ481EP-T1_GE3
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Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
80 V
Series
TrenchFET
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.99mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
1.07mm
Страна на произход
China
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 17,88
€ 0,715 Each (In a Pack of 25) (ex VAT)
Стандарт
25
€ 17,88
€ 0,715 Each (In a Pack of 25) (ex VAT)
Стандарт
25
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
25 - 75 | € 0,715 | € 17,88 |
100 - 475 | € 0,551 | € 13,78 |
500 - 975 | € 0,47 | € 11,75 |
1000+ | € 0,376 | € 9,39 |
Технически документи
Спецификации
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
80 V
Series
TrenchFET
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.99mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
1.07mm
Страна на произход
China