N-Channel MOSFET, 112 A, 120 V, 3-Pin TO-220 Toshiba TK56E12N1,S1X(S
Технически документи
Спецификации
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-20 V, +20 V
Forward Diode Voltage
1.2V
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Voltage
120 V
Series
U-MOSVIII-H
Width
4.45mm
Package Type
TO-220
Length
10.16mm
Maximum Power Dissipation
168 W
Height
15.1mm
Maximum Continuous Drain Current
112 A
Maximum Drain Source Resistance
7 mΩ
Brand
ToshibaTypical Gate Charge @ Vgs
69 nC @ 10 V
Детайли за продукта
11mm, 3.5 Digit Display
Backlit display
Programmable decimal points
Zero and span calibrated by potentiometers
Offset adjustment: ±950 + (span x 0.25) counts
Screw terminal connections
One-piece, snap-in design
LCD 4 to 20mA Current Loop Powered Meters
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
10
P.O.A.
10
Технически документи
Спецификации
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-20 V, +20 V
Forward Diode Voltage
1.2V
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Voltage
120 V
Series
U-MOSVIII-H
Width
4.45mm
Package Type
TO-220
Length
10.16mm
Maximum Power Dissipation
168 W
Height
15.1mm
Maximum Continuous Drain Current
112 A
Maximum Drain Source Resistance
7 mΩ
Brand
ToshibaTypical Gate Charge @ Vgs
69 nC @ 10 V
Детайли за продукта
11mm, 3.5 Digit Display
Backlit display
Programmable decimal points
Zero and span calibrated by potentiometers
Offset adjustment: ±950 + (span x 0.25) counts
Screw terminal connections
One-piece, snap-in design