N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STMicroelectronics STP10NK60ZFP
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Технически документи
Спецификации
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-30 V, +30 V
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
3V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Width
4.6mm
Maximum Power Dissipation
35 W
Package Type
TO-220FP
Maximum Continuous Drain Current
10 A
Length
10.4mm
Height
9.3mm
Maximum Drain Source Resistance
750 mΩ
Brand
STMicroelectronicsTypical Gate Charge @ Vgs
50 nC @ 10 V
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 2,852
Each (In a Pack of 5) (ex VAT)
Стандарт
5
€ 2,852
Each (In a Pack of 5) (ex VAT)
Стандарт
5
Купете в насипно състояние
количество | Единична цена | Per Опаковка |
---|---|---|
5 - 5 | € 2,852 | € 14,26 |
10 - 95 | € 2,42 | € 12,10 |
100 - 495 | € 1,885 | € 9,42 |
500 - 995 | € 1,601 | € 8,00 |
1000+ | € 1,333 | € 6,66 |
Технически документи
Спецификации
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-30 V, +30 V
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
3V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Width
4.6mm
Maximum Power Dissipation
35 W
Package Type
TO-220FP
Maximum Continuous Drain Current
10 A
Length
10.4mm
Height
9.3mm
Maximum Drain Source Resistance
750 mΩ
Brand
STMicroelectronicsTypical Gate Charge @ Vgs
50 nC @ 10 V