STMicroelectronics MDmesh N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220FP STF13NM60N

Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
30 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
16.4mm
Детайли за продукта
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 21,04
€ 2,10 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
10
€ 21,04
€ 2,10 Each (Supplied in a Tube) (ex VAT)
Производствен пакет (Тръба)
10
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
количество | Единична цена |
---|---|
10 - 99 | € 2,10 |
100 - 499 | € 1,68 |
500 - 999 | € 1,50 |
1000+ | € 1,26 |
Технически документи
Спецификации
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
30 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
16.4mm
Детайли за продукта