Технически документи
Спецификации
Brand
SemelabChannel Type
N
Idss Drain-Source Cut-off Current
25 to 75mA
Maximum Drain Source Voltage
40 V
Maximum Gate Source Voltage
+40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
60 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
3.05 x 2.54 x 1.02mm
Height
1.02mm
Width
2.54mm
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+175 °C
Length
3.05mm
Страна на произход
United Kingdom
Детайли за продукта
N-channel JFET, Semikron
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
100
P.O.A.
100
Технически документи
Спецификации
Brand
SemelabChannel Type
N
Idss Drain-Source Cut-off Current
25 to 75mA
Maximum Drain Source Voltage
40 V
Maximum Gate Source Voltage
+40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
60 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
3.05 x 2.54 x 1.02mm
Height
1.02mm
Width
2.54mm
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+175 °C
Length
3.05mm
Страна на произход
United Kingdom
Детайли за продукта
N-channel JFET, Semikron
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.