onsemi NXH100B120H3Q0PTG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount
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Технически документи
Спецификации
Channel Type
N
Transistor Configuration
Dual
Maximum Gate Emitter Voltage
±20V
Minimum Operating Temperature
-40 °C
Configuration
Dual
Mounting Type
Surface Mount
Pin Count
22
Maximum Operating Temperature
+150 °C
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
186 W
Package Type
Q0BOOST
Batteries
3 x AAA BatteryDimensions
66.2 x 32.8 x 11.9mm
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 70,175
Each (Supplied in a Tray) (ex VAT)
24
€ 70,175
Each (Supplied in a Tray) (ex VAT)
24
Технически документи
Спецификации
Channel Type
N
Transistor Configuration
Dual
Maximum Gate Emitter Voltage
±20V
Minimum Operating Temperature
-40 °C
Configuration
Dual
Mounting Type
Surface Mount
Pin Count
22
Maximum Operating Temperature
+150 °C
Maximum Collector Emitter Voltage
1200 V
Maximum Power Dissipation
186 W
Package Type
Q0BOOST
Batteries
3 x AAA BatteryDimensions
66.2 x 32.8 x 11.9mm