Технически документи
Спецификации
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Width
1.3mm
Minimum Operating Temperature
-55 °C
Height
1mm
Детайли за продукта
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 0,207
Each (Supplied on a Reel) (ex VAT)
10
€ 0,207
Each (Supplied on a Reel) (ex VAT)
10
Купете в насипно състояние
количество | Единична цена | Per Ролка |
---|---|---|
10 - 240 | € 0,207 | € 2,07 |
250+ | € 0,175 | € 1,75 |
Технически документи
Спецификации
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Width
1.3mm
Minimum Operating Temperature
-55 °C
Height
1mm
Детайли за продукта