Технически документи
Спецификации
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
140 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
225 mW
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
160 V dc
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3.04 x 1.4 x 1.01mm
Страна на произход
China
Детайли за продукта
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
Производствен пакет (Ролка)
100
P.O.A.
Производствен пакет (Ролка)
100
Технически документи
Спецификации
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
140 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
225 mW
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
160 V dc
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3.04 x 1.4 x 1.01mm
Страна на произход
China
Детайли за продукта
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.