Технически документи
Спецификации
Brand
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
100 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.5 x 5.5 x 26.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Страна на произход
China
Детайли за продукта
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 2,406
Each (In a Tube of 30) (ex VAT)
30
€ 2,406
Each (In a Tube of 30) (ex VAT)
30
Купете в насипно състояние
количество | Единична цена | Per Тръба |
---|---|---|
30 - 30 | € 2,406 | € 72,17 |
60 - 120 | € 2,213 | € 66,40 |
150 - 270 | € 2,081 | € 62,42 |
300+ | € 1,915 | € 57,46 |
Технически документи
Спецификации
Brand
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
100 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.5 x 5.5 x 26.5mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Страна на произход
China
Детайли за продукта
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.