Технически документи
Спецификации
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
4 to 16mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
3pF
Source Gate On-Capacitance
7pF
Dimensions
2.92 x 1.3 x 0.93mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Страна на произход
Philippines
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
3000
P.O.A.
3000
Технически документи
Спецификации
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
4 to 16mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
3pF
Source Gate On-Capacitance
7pF
Dimensions
2.92 x 1.3 x 0.93mm
Height
0.93mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Страна на произход
Philippines
Детайли за продукта
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.