Dual N-Channel MOSFET, 19 A, 650 V, 3-Pin TO220F onsemi FCPF165N65S3
Технически документи
Спецификации
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
650 V
Package Type
TO220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
10.3mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Width
4.6mm
Height
15.7mm
Series
SuperFET III
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Детайли за продукта
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
5
P.O.A.
5
Технически документи
Спецификации
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
650 V
Package Type
TO220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V ac/dc
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
10.3mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Width
4.6mm
Height
15.7mm
Series
SuperFET III
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Детайли за продукта