Технически документи
Спецификации
Brand
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
200 mA, 350 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.8 Ω, 7.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
990 mW
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.35mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Страна на произход
Malaysia
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
3000
P.O.A.
3000
Технически документи
Спецификации
Brand
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
200 mA, 350 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.8 Ω, 7.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
990 mW
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.35mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Страна на произход
Malaysia