Технически документи
Спецификации
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
500 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
6.75 nC @ 10 V
Width
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
2.39mm
Страна на произход
China
Детайли за продукта
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
P.O.A.
50
P.O.A.
50
Технически документи
Спецификации
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
500 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
6.75 nC @ 10 V
Width
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
2.39mm
Страна на произход
China
Детайли за продукта
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.