Технически документи
Спецификации
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Pin Count
3
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.4V
Mounting Type
Surface Mount
Minimum Gate Threshold Voltage
2.5V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
250 V
Maximum Gate Source Voltage
±20 V
Series
HiperFET
Height
4.83mm
Length
10.41mm
Width
11.05mm
Maximum Continuous Drain Current
80 A
Maximum Power Dissipation
390 W
Brand
IXYSMaximum Drain Source Resistance
16 mΩ
Package Type
D2PAK (TO-263)
Typical Gate Charge @ Vgs
83 @ 10 V nC
Информацията за складовите наличности временно не е налична.
Моля, проверете отново по-късно.
€ 9,19
Всеки (ex VAT)
1
€ 9,19
Всеки (ex VAT)
1
Купете в насипно състояние
количество | Единична цена |
---|---|
1 - 4 | € 9,19 |
5 - 9 | € 7,89 |
10 - 24 | € 7,50 |
25+ | € 7,18 |
Технически документи
Спецификации
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Pin Count
3
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.4V
Mounting Type
Surface Mount
Minimum Gate Threshold Voltage
2.5V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
250 V
Maximum Gate Source Voltage
±20 V
Series
HiperFET
Height
4.83mm
Length
10.41mm
Width
11.05mm
Maximum Continuous Drain Current
80 A
Maximum Power Dissipation
390 W
Brand
IXYSMaximum Drain Source Resistance
16 mΩ
Package Type
D2PAK (TO-263)
Typical Gate Charge @ Vgs
83 @ 10 V nC