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SiC N-Channel MOSFET Module, 45 A, 1200 V AG-EASY1B-2 Infineon F423MR12W1M1B76BPSA1

Номер на артикул на RS: 234-8965Марка: Infineon№ по каталога на производителя: F423MR12W1M1B76BPSA1
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Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY1B-2

Series

F4

Mounting Type

Chassis Mount

Maximum Drain Source Resistance

0.0225 Ω

Maximum Gate Threshold Voltage

5.55V

Transistor Material

SiC

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Информацията за складовите наличности временно не е налична.

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Информацията за складовите наличности временно не е налична.

P.O.A.

SiC N-Channel MOSFET Module, 45 A, 1200 V AG-EASY1B-2 Infineon F423MR12W1M1B76BPSA1
Изберете тип опаковка

P.O.A.

SiC N-Channel MOSFET Module, 45 A, 1200 V AG-EASY1B-2 Infineon F423MR12W1M1B76BPSA1
Информацията за складовите наличности временно не е налична.
Изберете тип опаковка

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Технически документи

Спецификации

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY1B-2

Series

F4

Mounting Type

Chassis Mount

Maximum Drain Source Resistance

0.0225 Ω

Maximum Gate Threshold Voltage

5.55V

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more